Radiation induced structural changes in amorphous SiO2: I. Point defects

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 31, Issue 12 B, 1992, Pages 4411-4421

  Devine, R A B ^a  

^a Telecommunications ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DEFECTS; ETCHING; LITHOGRAPHY; PLASMA DEVICES; SILICA;

DEFECT REACTIVATION; POINT DEFECTS;

RADIATION DAMAGE;

EID: 0026990038     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.31.4411     Document Type: Article

References (50)