Radiation Effects in Oxynitrides Grown in N2O

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1854-1863

  Saks, N S ^a   Simons, M ^b   Fleetwood, D M ^c   Yount, J T ^d   Lenahan, P M ^d   Klein, R B ^e  

^a NAVAL RESEARCH LABORATORY   (United States)

^b RTI INTERNATIONAL   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

^e SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MOS DEVICES; NITRIDES; NITROGEN OXIDES; OXIDATION; PARAMAGNETIC RESONANCE; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

HOLE TRAPPING; OXYNITRIDES;

GATES (TRANSISTOR);

EID: 0028698045     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340517     Document Type: Article

References (32)

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