Hot-carrier effects and lifetime prediction in off-state operation of deep submicron SOI N-MOSFET's

IEEE Transactions on Electron Devices

Volumn 45, Issue 5, 1998, Pages 1140-1146

  Renn, Shing Hwa ^a   Rauly, Emmanuel ^b   Pelloie, Jean Luc ^a   Balestra, Francis ^a  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

Floating body; Hot carrier effects; Lifetime; Low temperature; Parasitic bipolar transistor; SOI MOSFET; Two stage degradation

Indexed keywords

AGING OF MATERIALS; BIPOLAR TRANSISTORS; COMPUTER SIMULATION; DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; SILICON ON INSULATOR TECHNOLOGY;

FLOATING BODY; HOT CARRIER EFFECTS (HCE); PARASITIC BIPOLAR TRANSISTORS (PBT);

MOSFET DEVICES;

EID: 0032071959     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.669572     Document Type: Article

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