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Volumn 13, Issue 12, 1992, Pages 603-605

Hot-Electron-Induced Degradation of Front and Back Channels in Partially and Fully Depleted SIMOX MOSFET's

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; HOT CARRIERS;

EID: 0026987239     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192858     Document Type: Article
Times cited : (33)

References (9)
  • 2
    • 0023438606 scopus 로고
    • Hot-electron effects in silicononinsulator n-channel MOSFET's
    • J.-P. Colinge, “Hot-electron effects in silicononinsulator n-channel MOSFET's,” IEEE Trans. Electron Devices, vol. ED-34, pp. 2173–2177, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.34 ED , pp. 2173-2177
    • Colinge, J.P.1
  • 4
    • 0026168694 scopus 로고
    • Hot-carrier-induced degradation of the back interface in short-channel silicononinsulator MOSFET's
    • T. Ouisse, S. Cristoloveanu, and G. Borel, “Hot-carrier-induced degradation of the back interface in short-channel silicononinsulator MOSFET's,” IEEE Electron Device Lett., vol. 12, pp. 290–292, 1991.
    • (1991) IEEE Electron Device Lett. , vol.12 , pp. 290-292
    • Ouisse, T.1    Cristoloveanu, S.2    Borel, G.3
  • 5
    • 0024870475 scopus 로고
    • Half-micron CMOS ultrathin silicon on insulator
    • P.H. Woerlee et al, “Half-micron CMOS ultrathin silicon on insulator,” in IEDM Tech. Dig., 1989, pp. 821–824.
    • (1989) IEDM Tech. Dig. , pp. 821-824
    • Woerlee, P.H.1
  • 6
    • 0025578859 scopus 로고
    • A half-micron CMOS technology using ultrathin silicon on insulator
    • P.H. Woerlee et al., “A half-micron CMOS technology using ultrathin silicon on insulator,” in IEDM Tech. Dig., 1990, pp. 583–586.
    • (1990) IEDM Tech. Dig. , pp. 583-586
    • Woerlee, P.H.1
  • 7
    • 0041314990 scopus 로고
    • Parameter extraction method for inhomogeneous MOSFET's locally damaged by hot carrier injection
    • H. Haddara and S. Cristoloveanu, “Parameter extraction method for inhomogeneous MOSFET's locally damaged by hot carrier injection,” Solid-State Electron., vol. 31, pp. 1573–1581, 1988.
    • (1988) Solid-State Electron. , vol.31 , pp. 1573-1581
    • Haddara, H.1    Cristoloveanu, S.2
  • 8
    • 0020830319 scopus 로고
    • Threshold voltage of thin-film silicononinsulator (SOI) MOSFET's
    • H.-K. Lim and J.C. Fossum, “Threshold voltage of thin-film silicononinsulator (SOI) MOSFET's,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.30 ED , pp. 1244-1251
    • Lim, H.K.1    Fossum, J.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.