메뉴 건너뛰기




Volumn 38, Issue 6, 1991, Pages 1384-1391

Analysis and Control of Floating-Body Bipolar Effects in Fully Depleted Submicrometer SOI MOSFET’s

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS; SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS, BIPOLAR - JUNCTIONS;

EID: 0026172212     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.81630     Document Type: Article
Times cited : (216)

References (13)
  • 1
    • 0024627953 scopus 로고
    • Short-channel effects in SOI MOSFET’s
    • Mar.
    • S. Veeraraghavan and J. G. Fossum, “Short-channel effects in SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 36, pp. 522–528, Mar. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 522-528
    • Veeraraghavan, S.1    Fossum, J.G.2
  • 3
    • 0039147383 scopus 로고
    • Analysis of kink characteristics in silicon-on-insulator MOSFET’s using two-carrier modeling
    • Feb.
    • K. Kato, T. Wada, and K. Taniguchi, “Analysis of kink characteristics in silicon-on-insulator MOSFET’s using two-carrier modeling,” IEEE Trans. Electron Devices, vol. ED-32, pp. 458–462, Feb. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 458-462
    • Kato, K.1    Wada, T.2    Taniguchi, K.3
  • 4
    • 0023961488 scopus 로고
    • Reduction of kink effect in thin-film SOI MOSFET’s
    • Feb.
    • J.-P. Colinge, “Reduction of kink effect in thin-film SOI MOSFET’s,” IEEE Electron Device Lett., vol. 9, pp. 97–99, Feb. 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 97-99
    • Colinge, J.-P.1
  • 5
    • 0023999599 scopus 로고
    • Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET’s
    • Apr.
    • K. K. Young and J. A. Burns, “Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 426–431, Apr. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 426-431
    • Young, K.K.1    Burns, J.A.2
  • 6
    • 0024133319 scopus 로고
    • Single-transistor latch in SOI MOSFET’s
    • Dec.
    • C.-E.D. Chen el al., “Single-transistor latch in SOI MOSFET’s,” IEEE Electron Device Lett., vol. 9, pp. 636–638, Dec. 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 636-638
    • Chen, C.-E.D.1
  • 7
    • 0024906555 scopus 로고
    • Source-drain breakdown in thin SOI transistors
    • (Stateline. NV)
    • J. McKitterick, “Source-drain breakdown in thin SOI transistors,” in Proc. IEEE SOS/SOI Technol. Conf. (Stateline. NV), 1989, p. 17.
    • (1989) Proc. IEEE SOS/SOI Technol. Conf. , pp. 17
    • McKitterick, J.1
  • 10
    • 0039740033 scopus 로고
    • A charge-based large-signal model for thin-film SOI MOSFET’s
    • Feb.
    • H. K. Lim and J. G. Fossum, “A charge-based large-signal model for thin-film SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-32, pp. 446–457, Feb. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 446-457
    • Lim, H.K.1    Fossum, J.G.2
  • 11
    • 0024106969 scopus 로고
    • A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD
    • Nov.
    • S. Veeraraghavan and J. G. Fossum, “A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD,” IEEE Trans. Electron Devices, vol. 35, pp. 1866–1875, Nov. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 1866-1875
    • Veeraraghavan, S.1    Fossum, J.G.2
  • 12
    • 0019608018 scopus 로고
    • An analytical model for minority-carrier transport in heavily doped regions of silicon devices
    • Sept.
    • J. G. Fossum and M. A. Shibib, “An analytical model for minority-carrier transport in heavily doped regions of silicon devices.” IEEE Trans. Electron Devices, vol ED-28, pp. 1018–1025, Sept. 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 1018-1025
    • Fossum, J.G.1    Shibib, M.A.2
  • 13
    • 0023450670 scopus 로고
    • Anomalous subthreshold current voltage characteristics of n-channel SOI MOSFET’s
    • Nov.
    • J. G. Fossum, R. Sundaresan, and M. Matloubian, “Anomalous subthreshold current voltage characteristics of n-channel SOI MOSFET’s,” IEEE Electron Device Lett., vol. EDL-8, pp. 544–546, Nov. 1987.
    • (1987) IEEE Electron Device Lett. , vol.EDL-8 , pp. 544-546
    • Fossum, J.G.1    Sundaresan, R.2    Matloubian, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.