Hot-carrier effects in deep submicron thin film SOI MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 877-880

  Renn, S H ^a   Pelloie, J L ^b   Balestra, F ^a  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; SILICON ON INSULATOR TECHNOLOGY; BIPOLAR TRANSISTORS; ELECTRIC CURRENTS; GATES (TRANSISTOR); MOSFET DEVICES; THIN FILMS;

DEEP SUB-MICRON; DEEP SUBMICRONS; GATE-LENGTH; HOT CARRIER INJECTION; HOT-CARRIER EFFECTS; N-CHANNEL; P CHANNELS; SOI-MOSFETS; SUB-MICRON THIN FILMS; THIN FILM SOI;

MOSFET DEVICES; HOT CARRIERS;

HOT CARRIER EFFECTS; HOT CARRIER INJECTIONS;

EID: 0030397506     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554119     Document Type: Conference Paper

References (7)

1. C. Hu, S.C. Tam, F. C. Hsu, P. K. KO,T. Y. Chan and K.W. Terrill, IEEE TED-32, P. 375,1985
2. J. P. Colinge, IEEE EDL-9, p. 2173, 1987
3. L. T. Su, J. E. Chung and D. A. Antoniadis, IEDM Tech. Dig., P. 349, 1992
4. C. E. D. Chen, M. Matloubian, R. Sundaresan, B.-Y Mao, C.C. Wei and G.P. Pollack, IEEE EDL-9, p. 636,1988
5. F. Balestra, J. Jomaah, G. Ghibaudo, O. Faynot, A. J. Auberton-Herve, B. Giffard, IEEE TED-41, p. 109,1994
6. R.Woltjer, G. Padzen, H. Pomp, H. Lifka, P. Woerlee, IEEE TED-42, p. 109,1995
7. A. Bravaix, D. Vuillaume, IEEE TED-42, p. 101, 1995