Oxide-field dependence of the NMOS hot-carrier degradation rate and its impact on AC-lifetime prediction

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 37-40

  Kim, SeokWon A ^a   Menberu, Beniyam ^a   Kopley, Thomas E ^a   Chung, James E ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CORRELATION METHODS; DEGRADATION; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); MOSFET DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

HOT CARRIER DEGRADATION RATE; LIGHTLY DOPED DRAIN; OXIDE ELECTRIC FIELD; STRESS BIAS CONDITIONS;

HOT CARRIERS;

EID: 0029490087     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)