An Improved Analytical Solution of Energy Balance Equation for Short-Channel SOI MOSFET's and Transverse-Field-Induced Carrier Heating

IEEE Transactions on Electron Devices

Volumn 42, Issue 2, 1995, Pages 301-306

  Omura, Yasuhisa ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); HEATING; KINETIC THEORY; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE;

ANALYTICAL SOLUTION; CARRIER HEATING; ENERGY BALANCE EQUATION; GATE CURRENTS; KINETIC ENERGY; NONSATURATED DRAIN CURRENT REGION; TRANSVERSE FIELD; TWO DIMENSIONAL;

MOSFET DEVICES;

EID: 0029244715     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370065     Document Type: Article

References (17)

1. R. S. Huang and P. H. Ladbrooke, “The physics of excess electron velocity in submicron channel FET's,” J. of Appl. Phys., vol. 48, pp. 4791–4798, 1977.
2. G. Baccarani and M. R. Wordeman, “An investigation of steady-state velocity overshoot in silicon,” Solid State Electron., vol. 28, pp. 407–416, 1985.
3. J. P. Leburton and G. Dorda, “Effect of the electron temperature on the gate-induced charge in small size MOS transistors,” Solid State Electron., vol. 26, pp. 611–615, 1983.
4. D. S.-Landsiedel and G. Dorda, “Novel hot-electron effects in the channel of MOSFET's observed by capacitance measurements,” IEEE Trans. Electron Devices, vol. 32, pp. 1294–1301, 1985.
5. S. E. Laux and M. V. Fischetti, “Monte-Carlo simulation of submicrometer Si-MOSFET's at 77 and 300 K,” IEEE Electron Device Lett., vol. 9, pp. 467–469, 1988.
6. L. Henrickson, Z. Peng, J. Frey, and N. Goldsman, “Enhanced reliability in Si MOSFETs with channel lengths under 0.2 Micron,” Solid State Electron., vol. 10, pp. 1275–1278, 1990.
7. “VLSI electronics microstructure sciences,” vol. 18, “Advanced MOS Device Physics,” N. G. Einspruch, Ed. Chapt. 8, pp. 343–351, 1989.
8. Q. Lin, N. Goldsman, and G.-C. Tai, “A globally covergent method for solving the energy balance equation in device simulation,” Solid State Electron., vol. 36, pp. 411–419, 1993.
9. D. M. Caughey and R. E. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” IEEE Proc., vol. 55, pp. 2192–2193, 1967.
10. A. G. Sabnis and J. T. Clemens, “Characterization of electron velocity in the inverted (100) Si surface,” IEEE IEDM, Tech. Dig., pp. 18–21, 1979.
11. Here, the author used the simulator MEDICIR developed by TMA Corp. in the USA. In this simulator, the current continuity equation and the energy balance equation are solved with a coupled form.
12. Y. Omura and K. Izumi, “Physical background of substrate current characteristics and hot-carrier immunity in short-channel ultrathin-film MOSFETs/SIMOX,” IEEE Trans. Electron Devices, vol. 41, pp. 352–358, 1994.
13. J.-P. Colinge, “Silicon-on-Insulator technology: materials to VLSI.” Kluwer Academic Publishers, ch. 5, 1991.
14. J. C. Sturm, K. Tokunaga, and J.-P. Colinge, “Increased drain saturation current in ultra-thin Silicon-on-Insulator (SOI) MOS transistor,” IEEE Electron Device Lett., vol. 9, pp. 460–463, 1988.
15. L. T. Su, H. Fang, J. E. Chung, and D. A. Antoniadis, “Hot-carrier effects in fully-depleted SOI nMOSFETs,” IEEE 1992 IEDM, Tech. Dig., pp. 349–352, 1992.
16. E. Takeda, H. Kume, T. Toyabe, and S. Asai, “Submicrometer MOSFET structure for minimizing hot-carrier generation,” IEEE Trans. Electron Devices, vol. 29, p. 611, 1982.
17. M. Tack and C. Claeys, “The mobility and transconductance behavior i n thin film SOI transistors,” 4th Int. Symp. SOI Technol. Devices (The Electrochemical Society), Proc., vol. 90–6, pp. 532–543, 1990.