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Solid State Electronics

Volumn 16, Issue 3, 1973, Pages 381-394

Use of a Schottky barrier to measure impact ionization coefficients in semiconductors

(3) Woods, M H a Johnson, W C a Lampert, M A a

a PRINCETON UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

IMPACT IONIZATION;

SEMICONDUCTOR MATERIALS;

EID: 0015604280 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(73)90013-0 Document Type: Article

Times cited : (177)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.