Dead-Space Effects Under Near-Breakdown Conditions in AlGaAs/GaAs HBT’s

IEEE Electron Device Letters

Volumn 14, Issue 3, 1993, Pages 103-106

  Carlo, A Di ^a   Lugli, P ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; FAILURE ANALYSIS; HETEROJUNCTIONS; IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BREAKDOWN VOLTAGE; DEAD SPACE EFFECTS; DELAY EQUATION; DRIFT DIFFUSION SIMULATORS; HETEROJUNCTION BIPOLAR TRANSISTOR (HBT'S); NEAR AVALANCHE REGIME;

BIPOLAR TRANSISTORS;

EID: 0027559864     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215125     Document Type: Article

References (21)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
2. J. J. Liou and J. S. Yuan, “An avalanche multiplication model for bipolar transistors,” Solid-State Electron., vol. 33, pp. 35–38, 1990.
3. S. Selberherr, Analysis and Simulation of Semiconductor Devices. Vienna: Springer, 1984.
4. E. F. Crabbe, J. M. C. Stork, G. Baccarani, M. V. Fischetti, and S. E. Laux, “The impact of nonequilibrium transport on breakdown and transit time in bipolar transistors,” in IEDM Tech. Dig., 1990, pp. 463–466.
5. W. Quade, M. Rudan, and E. Scholl, “Hydrodynamic simulation of impact ionization effects in p-n junctions,” IEEE Trans. Computer-Aided Design, vol. 10, pp. 1287–1293, 1991.
6. R. Thoma et al, “An improved impact ionization model for high-energy electron transport in Si with Monte Carlo simulation,” J. Appl. Phys., vol. 69, pp. 2300–2311, 1991.
7. N. Sano and A. Yoshii, “Impact ionization theory consistent with a realistic band structure of silicon,” Phys. Rev. B., vol. 45, pp. 4171–4180, 1992.
8. J. Bude, K. Hess, and G. J. Jafrate, “Impact ionization in semiconductors: Effects of high electric fields and high scattering rates,” Phys. Rev. B, vol. 45, pp. 10958–10964, 1992.
9. G. Baccarani, M. Rudan, R. Guerrieri, and P. Ciampolini, “Physical models for numerical device simulation,” in Process and Device Modelling, W. L. Engl, Ed. Amsterdam: North-Holland, 1986.
10. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation. Vienna: Springer, 1989.
11. R. Katoh and M. Kurata, “A model-based comparison of AlInAs/ GalnAs and InP/InGaAs HBT’s,” IEEE Trans. Electron Devices, vol. 37, pp. 1245–1252, 1990.
12. M. E. Hafizi, C. R. Crowell, L. M. Pawlowiz, and M. E. Kim, “Improved current gain and fT through doping profile selection in linearly graded heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 37, pp. 1779–1788, 1990.
13. F. Ali and A. Gupta, Eds., HEMTs and HBTs: Devices, Fabrication, and Circuits. Boston: Artech House, 1991.
14. J. J. Chen, G. Gao, J. Chyi, and H. Morkog, “Breakdown behavior of GaAs/AlGaAs HBT’s,” IEEE Trans. Electron Devices, vol. 36, pp. 2165–2171, 1988.
15. E. O. Kane, “Electron scattering by pair production in silicon,” Phys. Rev., vol. 159, pp. 624–631, 1967.
16. P. Lugli, “Monte Carlo simulation of charge transport in semiconductor devices,” in Proc. 22nd European Solid State Device Res. Conf, 1992; also Microelectron. Eng., vol. 19, pp. 275–282, 1992.
17. A. Di Carlo, P. Lugli, P. Pavan, E. Zanoni, and R. Malik, “Impact ionization phenomena in AlGaAs/GaAs HBTs,” in Proc. 22nd European Solid State Device Res. Conf, 1992; also Microelectron. Eng, vol. 19, pp. 135–140, 1992.
18. E. Zanoni et al., “Negative base current and impact ionization phenomena in AlGaAs/GaAs HBT’s,” IEEE Electron Device Lett., vol. 13, pp. 253–255, 1992.
19. M. H. Woods, W. C. Johnson, and M. A. Lampert, “Use of a Schottky barrier to measure impact ionization coefficients in semiconductors,” Solid-State Electron., vol. 16, pp. 381–395, 1973.
20. G. E. Bulman, V. M. Robbins, and G. E. Stilman, “The determination of impact ionization coefficients in (100) gallium arsenide by noise and photocurrent multiplication measurements,” IEEE Trans. Electron Devices, vol. 32, pp. 2454–2466, 1985.
21. D. D. Bainov and D. P. Mishev, Oscillation Theory for Neutral Differential Equations with Delay. Boston: Adam Hilger, 1991.