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Volumn 66, Issue 25, 1995, Pages 3507-3509

Impact ionization coefficients in (100) GaInP

Author keywords

ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; GALLIUM PHOSPHIDES; IMPACT PHENOMENA; INDIUM PHOSPHIDES; IONIZATION; P N JUNCTIONS

Indexed keywords


EID: 36448998698     PISSN: 00036951     EISSN: 10773118     Source Type: Journal    
DOI: 10.1063/1.113779     Document Type: Article
Times cited : (27)

References (11)
  • 5
  • 6
    • 0017679163 scopus 로고
    • Semicond. Semimet
    • G. E. Stillman and C. M. Wolfe, Semicond. Semimet. 12, 291 (1977).
    • (1977) , vol.12 , pp. 291
    • Stillman, G.E.1    Wolfe, C.M.2
  • 7
    • 0004005306 scopus 로고
    • Physics of Semiconductor Devices, 2nd ed.
    • Wiley, New York
    • S. M. Sze, in Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 150-151.
    • (1981) , pp. 150-151
    • Sze, S.M.1
  • 10
    • 0022152203 scopus 로고
    • IEEE Trans. Electron Devices
    • G. E. Bulman, V. M. Robbins, and G. E. Stillman, IEEE Trans. Electron Devices ED-32, 2454 (1985).
    • (1985) , vol.ED-32 , pp. 2454
    • Bulman, G.E.1    Robbins, V.M.2    Stillman, G.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.