Impact ionization in thin AlxGa1-xAs (x = 0.15 and 0.30) p-i-n diodes

Journal of Applied Physics

Volumn 82, Issue 3, 1997, Pages 1231-1235

  Plimmer, S A ^a   David, J P R ^a   Rees, G J ^a   Grey, R ^a   Herbert, D C ^b   Wight, D R ^b   Higgs, A W ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001238166     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365940     Document Type: Article

References (15)

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