Impact ionization coefficients in GaInP p-i-n diodes

Applied Physics Letters

Volumn 70, Issue 26, 1997, Pages 3567-3569

  Ghin, R ^a   David, J P R ^a   Hopkinson, M ^a   Pate, M A ^a   Rees, G J ^a   Robson, P N ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; IONIZATION OF SOLIDS; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS;

CAPACITANCE VOLTAGE MEASUREMENT; GALLIUM INDIUM PHOSPHIDE; HOLE IONIZATION; IMPACT IONIZATION COEFFICIENTS; PHOTOMULTIPLICATION MEASUREMENT;

SEMICONDUCTOR DIODES;

EID: 0031162043     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119235     Document Type: Article

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