Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers

Solid State Electronics

Volumn 36, Issue 11, 1993, Pages 1529-1540

  Jungemann, Chr ^a   Emunds, A ^a   Engl, W L ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; DISPERSION (WAVES); DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; NONLINEAR EQUATIONS; PHONONS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

ELECTRON PHONON INTERACTION; HOMOGENEOUS SILICON INVERSION LAYERS; LINEAR ELECTRON TRANSPORT; NONLINEAR ELECTRON TRANSPORT; PAULI'S EXCLUSION PRINCIPLE; SATURATION DRIFT VELOCITY; SCHROEDINGER EQUATION;

ELECTRON TRANSPORT PROPERTIES;

EID: 0027692894     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90024-K     Document Type: Article

References (36)

1. Hot-Electron Transport in Semiconductors
2. Proc. 3rd Conf. Solid-State Devices
3. Proc. Int. Conf. Solid Surfaces
4. Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors
5. Monte Carlo study of two-dimensional electron gas transport in Si-MOS devices
6. Morphology of SiSiO2 interface