A front-gate charge-pumping method for probing both interfaces in SOI devices

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1329-1335

  Li, Yujun ^a,b   Ma, T P ^a  

^a Yale University   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Charge pumping; Front and back coupling; Interface traps; Oxide charge; Soi transistors

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); HOT CARRIERS; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS;

FOWLER-NORDHEIM (FN) INJECTION; FRONT GATE CHARGE PUMPING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032097822     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678565     Document Type: Article

References (13)

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