Adaptation of the Charge Pumping Technique to Gated p-i-n Diodes Fabricated on Silicon on Insulator

IEEE Transactions on Electron Devices

Volumn 38, Issue 6, 1991, Pages 1432-1444

  Haddara, Hisham ^d   Ioannou, Dimitris E ^d  

^a ENSERG   (France)

^b CNRS   (France)

^c The British University in Egypt   (Egypt)

^d GEORGE MASON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING FILMS - CHARGE CARRIERS; SEMICONDUCTOR DEVICES, MOS; SEMICONDUCTOR DIODES - MODELING;

MOS DIODES; P-I-N DIODES; SOI FILMS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0026170774     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.81636     Document Type: Article

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