Buried-oxide charge trapping induced performance degradation in fully-depleted ultra-thin SOI p-MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 8, 1996, Pages 1200-1205

  Wei, Hua Fang ^a,c   Chung, James E ^b   Annamalai, Nagappan K ^a  

^a USA   (United States)

^b AGERE SYSTEMS   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; HOT CARRIERS; ION IMPLANTATION; OXIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE MEASUREMENT;

FRONT CHANNEL MEASUREMENT; HOT HOLE IMPACT IONIZATION; X RAY IRRADIATION;

MOSFET DEVICES;

EID: 0030211625     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.506769     Document Type: Article

References (10)

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