Mechanisms of hot-carrier induced degradation of SOI (SIMOX) MOSFET's

Microelectronic Engineering

Volumn 22, Issue 1-4, 1993, Pages 403-406

  Zaleski, A ^a   Ioannou, D E ^a   Campisi, G J ^b   Hughes, H L ^b  

^a GEORGE MASON UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDES; SILICON ON INSULATOR TECHNOLOGY; STRESS ANALYSIS;

ELECTRON TRAPPING; GATE OXIDES; HOLE TRAPPING; HOT CARRIER INDUCED DEGRADATION; INTERFACE STATE GENERATION; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0027641758     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(93)90198-E     Document Type: Article

References (5)

1. The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors
2. Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region
3. Aging analysis of nMOS of a 1.3- mu m partially depleted SIMOX SOI technology comparison with a 1.3- mu m bulk technology