Coupling between the front and back interfaces in the gate-controlled P+PN+ diode on silicon-on-insulator

Microelectronics Journal

Volumn 25, Issue 4, 1994, Pages 307-322

  Moragues, J M ^a   Bouzidi, J ^a   Ciantar, E ^a   Jerisian, R ^a   Oualid, J ^a   Cristoloveanu, S ^b  

^a Laboratoire des Matériaux et Composants Semiconducteurs de l'ENSPM Laboratoire d'accueuil 'Défauts dans les semiconducteurs et les oxydes' DommaineUniversitaire de Saint Jérǒme F 13397 Marseille cedex 13 France Tel: ^*

^b ENSERG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC NETWORK PARAMETERS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES;

DIODE INTERFACE COUPLING; INTERFACE COUPLING INTENSITY; LIM AND FOSSUM'S MODEL;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0028447178     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(94)90181-3     Document Type: Article

References (14)

1. A self-consistent analytic threshold voltage model for thin SOI n-channel MMOSFETs
2. Interface coupling effects in thin silicon on insulator MOSFETs
3. Electron trapping in irradiated SIMOX buried oxides
4. From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena
5. Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
6. Surface effects on p-n junction: characteristics of surface space-charge regions under non-equilibrium conditions
7. Characterisation of the bulk and interface properties of p-type SOI/SIMOX films
8. Correlation of the leakage current and charge pumping in SOI gated diodes
9. Subbreakdown drain leakage current in MOSFETs
10. Characterisation of hot-electron-stressed MOSFETs by low temperature measurements of the drain tunnel currents
11. Génération interfaciale des transistors NMOS implantés et naturels, á drain simple et doublement diffusés
12. Adaptation of the charge pumping technique to gated PIN diodes fabricated on silicon on insulator
13. A reliable approach to charge-pumping measurements in MOS transistors