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Volumn , Issue , 1995, Pages 643-646
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Front gate charge pumping technique for measuring both interfaces in fully depleted SOI/MOSFETs
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
ELECTRIC CURRENTS;
GATES (TRANSISTOR);
INTERFACES (MATERIALS);
RELIABILITY;
SILICON ON INSULATOR TECHNOLOGY;
SILICON WAFERS;
THIN FILM TRANSISTORS;
CHARGE PUMPING TECHNIQUE;
SIMOX WAFERS;
MOSFET DEVICES;
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EID: 0029517851
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
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References (4)
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