A New Technique for Measuring Lateral Distribution of Oxide Charge and Interface Traps Near MOSFET Junctions

IEEE Electron Device Letters

Volumn 12, Issue 7, 1991, Pages 393-395

  Chen, Wenliang ^a   Ma, Tso Ping ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

HOT CARRIERS; INTERFACE TRAPS; MOS TRANSISTORS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026187918     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.103618     Document Type: Article

References (3)

1. M. G. Ancona, N. S. Saks, and D. McCarthy, “Lateral distribution of hot-carrier-induced interface traps in MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, p. 2221, 1988.
2. J. C. Marchetaux, M. Bourcerie, A. Boudou, and D. Vuillaume, “Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot carrier aging,” IEEE Electron Device Lett., vol. 11, p. 406, 1990.
3. J. S. Brugler and P. G. A. Jespers, “Charge pumping in MOS devices,” IEEE Trans. Electron Devices, vol. ED-16, p. 297, 1969.