Measurements of interface state density in partially- and fully-depleted silicon-on-insulator MOSFETs by a high-low-frequency transconductance method

Solid State Electronics

Volumn 35, Issue 8, 1992, Pages 1031-1035

  Yang, P C ^a   Chen, H S ^a   Li, Sheng S ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON DENSITY MEASUREMENT; INTERFACES (MATERIALS); SEMICONDUCTING FILMS; SILICON ON INSULATOR TECHNOLOGY;

ENERGY DISTRIBUTION; HIGH LOW FREQUENCY (HLF) TRANSCONDUCTANCE METHOD; INTERFACE STATE DENSITY; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX); STATIC DRAIN CURRENT TO GATE VOLTAGE MEASUREMENT;

MOSFET DEVICES;

EID: 0026908979     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90001-S     Document Type: Article

References (10)

1. Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
2. A reliable approach to charge-pumping measurements in MOS transistors