Interface coupling effects in thin silicon-on-insulator MOSFET's

Superlattices and Microstructures

Volumn 8, Issue 1, 1990, Pages 111-116

  Ouisse, T ^a   Cristoloveanu, S ^a   Elewa, T ^a   Boukriss, B ^a   Chovet, A ^a  

^a ENSERG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET--SEMICONDUCTOR INSULATOR BOUNDARIES;

CHARGE PUMPING; FRONT CHANNEL PROPERTIES; SUBSTRATE BIAS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0025560686     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/0749-6036(90)90286-G     Document Type: Article

References (8)