Simulation of interface coupling effects in ultra-thin silicon on insulator mosfet’s

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

Volumn 11, Issue 4, 1992, Pages 513-517

  Hassein Bey, A ^a   Cristoloveanu, S ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; FIELD EFFECT TRANSISTORS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

FULLY-DEPLETED MOSFETS; INSULATOR MOSFETS; ULTRATHIN SILICON;

MOSFET DEVICES;

EID: 0026980538     PISSN: 03321649     EISSN: None     Source Type: Journal    
DOI: 10.1108/eb010111     Document Type: Review

References (8)

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6. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, –Double gate silicon on insulator transistors with volume invesion: A new device with greatly enhanced performance—, IEEE Electron Device Lett., vol. EDL-8, 1987, pp 410–412.
7. B. Mazhari, S. Cristoloveanu, D.E. Laonnou and A. Caviglia, –Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET's—, IEEE Trans. Electron Devices, vol-38, 1991, pp 1289–1295.
8. T. Ouisse, S. Cristoloveanu and G. Borel, –Influence of series resistances and interface coupling on the transconductance of fully-depleted silicon-on-insulator MOSFET's—, Solid-State Electronics, vol. 35, No. 2, 1992, pp 141–149.