Evaluation of fixed charge and interface trap densities in SIMOX wafers and their effects on device characteristics

IEICE Transactions on Electronics

Volumn E78-C, Issue 9, 1995, Pages 1263-1272

  Masui, Shoichi ^a   Nakajima, Tatsuo ^a   Kawamura, Keisuke ^a   Yano, Takayuki ^a   Hamaguchi, Isao ^a   Tachimori, Masaharu ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; VOLTAGE MEASUREMENT;

FIXED OXIDE CHARGE; INTERFACE TRAP DENSITY; PARASITIC CAPACITANCE; SIMOX WAFERS; SUBTHRESHOLD SLOPE;

SILICON WAFERS;

EID: 0029370554     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (29)