Thin suicide development for fully-depleted SOI CMOS technology

IEEE Transactions on Electron Devices

Volumn 45, Issue 5, 1998, Pages 1099-1104

  Liu, Harvey I ^a   Burns, James A ^a   Keast, Craig L ^a   Wyatt, Peter W ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

CMOSFET's; Contacts; Fully depleted; Silicon on insulator technology; Suicide

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION LINE THEORY; ULTRATHIN FILMS;

FULLY DEPLETED (FD) CHANNEL; SILICIDE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032071043     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.669543     Document Type: Article

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