Characteristics of aluminum-titanium electrical contacts on silicon

Applied Physics Letters

Volumn 23, Issue 2, 1973, Pages 99-101

  Bower, Robert W ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001806837     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1654823     Document Type: Article

References (10)

1. Analysis of the anisotropic pits indicates that the facets are tilted at an angle of [formula omitted] with respect to the substrate surface on 〈100〉-oriented Si. This would indicate the facets produced are equivalent (111) planes. Such (111) facets are known to be produced when Si disolves Al as reported by
2. Refer to the articles by