Novel salicide technology for thin film SOI MOSFET's using Ge pre-amorphization

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 126-127

  Hsiao, Tommy C ^a   Liu, Ping ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ENERGY GAP; INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THIN FILM DEVICES;

DOPANT REDISTRIBUTION; DOPANT SEGREGATION; PARASITIC RESISTANCE; SALICIDE TECHNOLOGY; SERIES RESISTANCE; SILICIDATION TEMPERATURE;

MOSFET DEVICES;

EID: 0030382432     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)