Use of a TiN cap to attain low sheet resistance for scaled TiSi2 on sub-half-micrometer polysilicon lines

IEEE Electron Device Letters

Volumn 17, Issue 11, 1996, Pages 506-508

  Apte, Pushkar P ^a,b   Paranjpe, Ajit ^c   Pollack, Gordon ^a,b  

^a IEEE

^b TEXAS INSTRUMENTS   (United States)

^c CVC Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; PHASE TRANSITIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TITANIUM NITRIDE;

SHEET RESISTANCE; SUB HALF MICROMETER POLYSILICON LINES; TITANIUM DISILICIDE;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0030291120     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.541763     Document Type: Article

References (8)

1. 2," Semicond. Int., vol. 18, p. 75, Mar. 1995.
2. S. Geissler, B. Porth, J. Lasky, J. Johnson, and S. Voldman, "A new three-dimensional MOSFET gate-induced drain leakage effect in narrow deep submicron devices," in IEDM Tech. Dig., 1991, p. 839.
3. K. Inoue, K. Fujii, K. Mikagi, and T. Kikkawa, "W/Ti self-aligned silicidation process for 0.25 μm CMOS," NEC Res. Develop., vol. 36, no. 1, p. 114, 1995.
4. R. W. Mann, L. A. Clevenger, P. D. Agnello, and F. R. White, "Silicides and local interconnections for high performance VLSI applications," IBM J. Res. Develop., vol. 39, no. 4, p. 403, 1995.
5. 2 formation on narrow polysilicon lines," in Evolution of Thin Film and Surface Structure and Morphology, Materials Research Soc. Proc., 1994, vol. 355, p. 539.
6. + type polycrystalline silicon lines," Appl. Phys. Lett., vol. 67, no. 16, p. 2308, 1995.
7. T. Yamazaki, K. Goto, T. Fukano, Y. Nara, T. Sugii, T. Ito, "21 psec switching 0.1 μm-CMOS at room temperature using high performance co-salicide process," in IEDM Tech. Dig., 1993, p. 906.
8. 2 thin films," J. Electrochem. Soc., vol. 141, no. 5, p. 1347, 1994.