Source/Drain Contact Resistance of Silicided Thin-Film SOI MOSFET’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 6, 1994, Pages 1007-1012

  Suzuki, Kunihiro ^a   Tanaka, Tetsu ^a   Tosaka, Yoshiharu ^a   Sugii, Toshihiro ^a   Andoh, Satoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THIN FILM DEVICES;

SILICIDATION; SILICIDED THIN FILM; SOURCE/DRAIN CONTACT (S/D) RESISTANCE MODEL;

MOSFET DEVICES;

EID: 0028445493     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.293314     Document Type: Article

References (17)

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