Manufacturability issues for application of silicides in 0.25 μm CMOS process and beyond

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 221-231

  Wang, Q F ^a   Lauwers, A ^a   Jonckx, F ^a   de Potter, M ^a   Chen, Chun cho ^a   Maex, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; ELECTRIC RESISTANCE; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); TITANIUM COMPOUNDS; ULSI CIRCUITS;

COBALT SILICIDE; MANUFACTURABILITY; POLY GATE; SILICIDES; TITANIUM SILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0029736577     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (38)