Novel stacked capacitor technology for 1 Gbit DRAMs with CVD-(Ba,Sr)TiO3 thin films on a thick storage node of Ru

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 115-118

  Yuuki, A ^a   Yamamuka, M ^a   Makita, T ^a   Horikawa, T ^a   Shibano, T ^a   Hirano, N ^a   Maeda, H ^a   Mikami, N ^a   Ono, K ^a   Ogata, H ^a   Abe, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; ELECTROCHEMICAL ELECTRODES; PERMITTIVITY; RANDOM ACCESS STORAGE; RUTHENIUM; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; THIN FILMS;

CHARGE LOSS; DYNAMIC RANDOM ACCESS STORAGE; STACKED CAPACITOR TECHNOLOGY; STEP COVERAGE; THICK STORAGE NODE;

CAPACITORS;

EID: 18544401526     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)