ECR MOCVD (Ba,Sr)TiO3 based stacked capacitor technology with RuO2/Ru/TiN/TiSix storage nodes for Gbit-scale DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 119-122

  Yamamichi, S ^a   Lesaicherre, P Y ^a   Yamaguchi, H ^a   Takemura, K ^a   Sone, S ^a   Yabuta, H ^a   Sato, K ^a   Tamura, T ^a   Nakajima, K ^a   Ohnishi, S ^a   Tokashiki, K ^a   Hayashi, Y ^a   Kato, Y ^a   Miyasaka, Y ^a   Yoshida, M ^a   et al , ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTROCHEMICAL ELECTRODES; ELECTRON BEAM LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; RUTHENIUM COMPOUNDS; SEMICONDUCTOR PLASMAS; SILICA; THIN FILMS; TITANIUM COMPOUNDS;

DYNAMIC RANDOM ACCESS MEMORY; INSULATING FILMS; POLYSILICON; RUTHENIUM DIOXIDE; STACKED CAPACITOR TECHNOLOGY; STORAGE NODES;

DIELECTRIC FILMS;

EID: 0029491604     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)