Dielectric properties of (Ba, Sr)Tio3 thin films deposited by Rf sputtering

Japanese Journal of Applied Physics

Volumn 32, Issue 9, 1993, Pages 4126-4130

  Horikawa, Tsuyoshi ^a   Mikami, Noboru ^a   Makita, Tetsuro ^a   Tanimura, Junji ^a   Kataoka, Masayuki ^a   Sato, Kazimao ^a   Nunoshita, Masahiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

(BaSr)TiO3; Dielectric constant; Ferroelectric; Grain size effect; Sputtering; Thin film

Indexed keywords

BARIUM TITANATE; CAPACITORS; DIELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; SPUTTER DEPOSITION; THIN FILMS;

GRAIN SIZE EFFECT; RADIOFREQUENCY SPUTTERING; THIN BARIUM STRONTIUM TITANATE FILMS;

FILM PREPARATION;

EID: 0027668451     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.4126     Document Type: Article

References (7)

1. K. Kashihara, H. Ito, K. Tsukamoto and Y. Akasaka: Ext. Abstr. 1991 Int. Con. Solid State Devices and Materials, Yokohama 1991 (Business Center for Academic Societies Japan, Tokyo, 1991) p. 192.
2. S. Yamamichi, T. Sakuma, K. Takamura and Y. Miyasaka: Jpn. J. Appl. Phys. 30 (1991) 2193.
3. Y. Miyasaka and S. Matsubara: Proe 7th Int. Symp. Applications of Ferroelectrics, 1990 (IEEE, New York, 1991) p. 121.
4. G. A. Smolenskii, K. I. Rozgachev: Zh. Tekh. Fiz. 24 (1954) 1751.
5. G. Arlt, D. Hennings and G. de With: J. Appl. Phys. 58 (1985) 1619.
6. K. Ishikawa: Phys. Rev. B37 (1988) 5852.
7. K. Uchino, E. Sadanaga and T. Hirose: J. Am. Ceram. Soc. 72 (1989) 1555.