(Ba0.75Sr0.25) TiO3 films for 256 Mbit DRAM

IEICE Transactions on Electronics

Volumn E77-C, Issue 3, 1994, Pages 385-391

  Horikawa, Tsuyoshi ^a   Mikami, Noboru ^a   Ito, Hiromi ^a   Ohno, Yoshikazu ^a   Makita, Tetsuro ^a   Sato, Kazunao ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; COMPOSITION; COMPOSITION EFFECTS; FERROELECTRICITY; FILM PREPARATION; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; SPUTTER DEPOSITION; THERMAL EFFECTS; THIN FILMS;

DIELECTRIC CONSTANT; GRAIN SIZE EFFECT; LEAK CURRENT DENSITY; RADIO FREQUENCY SPUTTERING METHOD; SILICON OXIDE EQUIVALENT THICKNESS;

DIELECTRIC FILMS;

EID: 0028396035     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)