Boron and phosphorus diffusion through an SiO2 layer from a doped polycrystalline Si source under various drive-in ambients

Solid State Electronics

Volumn 18, Issue 11, 1975, Pages 991-997

  Shimakura, K ^a   Suzuki, T ^a   Yadoiwa, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON - DIFFUSION; FILMS - IMPURITIES; PHOSPHORUS - DIFFUSION; SEMICONDUCTING SILICON - IMPURITIES;

TRANSISTORS, FIELD EFFECT;

EID: 0016569932     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(75)90117-3     Document Type: Article

References (11)

1. An investigation of instability and charge motion in metal-silicon oxide-silicon structures
2. Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures
3. +regions in silicon
4. Resistivity of Bulk Silicon and of Diffused Layers in Silicon
5. Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure