Experimental Derivation of the Source and Drain Resistance of MOS Transistors

IEEE Transactions on Electron Devices

Volumn 27, Issue 9, 1980, Pages 1846-1848

  Suciu, Paul I ^a   Johnston, Ralph L ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0019057709     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.20116     Document Type: Article

References (3)

1. G. Merckel, J. Borell, and N. Z. Cupcea, “An accurate large-signal MOS transistor model for use in computer-aided design,” IEEE Trans. Electron Devices, vol. ED-19, pp. 681-690, 1972.
2. A. S. Grcve, Physics and Technology of Semiconductor Devices. New York: Wiley 1967, p, 325.
3. A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the Inverted (100) Si surface,” in IEDM Tech. Dig., pp. 18-21, 1979.