Degradation of Tunnel-Oxide Floating-Gate EEPROM Devices and the Correlation with High Field-Current-Induced Degradation of Thin Gate Oxides

IEEE Transactions on Electron Devices

Volumn 36, Issue 9, 1989, Pages 1663-1682

  Witters, Johan S ^a   Groeseneken, Guido ^a   Maes, Herman E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL--FIXED; ELECTRONS--TUNNELING; OXIDES; PROBABILITY; SEMICONDUCTOR DEVICES, MOS;

FETMOS STRUCTURE; FLOATING GATE MEMORY DEVICES; FOWLER-NORDHEIM TUNNELING; MOS INTEGRATED CIRCUITS; THIN GATE OXIDES; TUNNEL-OXIDE FLOATING-GATE EEPROM;

DATA STORAGE, SEMICONDUCTOR;

EID: 0024735690     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.34229     Document Type: Article

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