Analysis of Hot-Carrier-Induced Degradation Mode on pMOSFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 6, 1990, Pages 1487-1495

  Matsuoka, Fumitomo ^a   Iwai, Hiroshi ^a   Hayashida, Hiroyuki ^a   Hama, Kaoru ^a   Toyoshima, Yoshiaki ^a   Maeguchi, Kenji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--CHARGE CARRIERS;

DEEP-GATE BIAS; HOT-CARRIER-INDUCED DEGRADATION; PMOSFET; POLYSILICON GATE; SHALLOW GATE BIAS; TRAPPED HOLES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025448697     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.106244     Document Type: Article

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