Room Temperature Instabilities of p-Channel Silicon Gate MOS Transistors

Journal of the Electrochemical Society

Volumn 125, Issue 8, 1978, Pages 1302-1306

  Nakayama, Haruo ^a   Osada, Yoshihiro ^a   Shindo, Masahiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

alumina silica catalyst; junction leakage; threshold voltage shift; walk out

Indexed keywords

SEMICONDUCTING DEVICES, MIS;

MOS TRANSISTORS;

TRANSISTORS;

EID: 0018005832     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2131667     Document Type: Article

References (7)

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