Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitors

Applied Physics Letters

Volumn 27, Issue 2, 1975, Pages 61-63

  Ma, T P ^a   Scoggan, G ^a   Leone, R ^a  

^a IBM   (United States)

Author keywords

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Indexed keywords

EID: 0002142497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.88366     Document Type: Article

References (11)

1. The “stray” irradiation is believed to come from the back-scattered electrons generated by the direct incident electron beam in three other quadrants.