Hot-Carrier-Injected Oxide Region and Hot-Electron Trapping as the Main Cause in Si nMOSFET Degradation

IEEE Transactions on Electron Devices

Volumn 34, Issue 2, 1987, Pages 386-391

  Tsuchiya, Toshiaki ^a   Kobayashi, Toshio ^a   Nakajima, Shigeru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

ENHANCED DEGRADATION; HOT ELECTRONS; HOT HOLES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023293298     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22934     Document Type: Article

References (14)

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