Influence of the gate leakage current on the noise performance of MESFETs and MODFETs

Solid State Electronics

Volumn 38, Issue 5, 1995, Pages 1081-1087

  Danneville, François ^a   Dambrine, Gilles ^a   Happy, Henri ^a   Tadyszak, Patrick ^a   Cappy, Alain ^a  

^a Institut d'Electronique et de Microélectronique du Nord UMR CNRS No 9929 Département Hyperfréquences et Semiconducteurs Domaine scientifique et universitaire de Villeneuve d'Ascq BP 69 59652 Villeneuve d'Ascq Cedex France ^*

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; CURRENT DENSITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; MESFET DEVICES; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

BOLTZMANN CONSTANT; MODFETS;

FIELD EFFECT TRANSISTORS;

EID: 0029306263     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)98678-V     Document Type: Article

References (15)

1. Theory of Noisy Fourpoles
2. Thermal Noise in Field-Effect Transistors
3. Gate noise in field effect transistors at moderately high frequencies
4. Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors