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Volumn , Issue , 1995, Pages 729-732
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High speed, high gain InP-based heterostructure FETs with high breakdown voltage and low leakage
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN OF SOLIDS;
ELECTRIC RESISTANCE;
ENERGY GAP;
GATES (TRANSISTOR);
HETEROJUNCTIONS;
LEAKAGE CURRENTS;
METALLORGANIC VAPOR PHASE EPITAXY;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DEVICE STRUCTURES;
TRANSPORT PROPERTIES;
GATE LEAKAGE;
FIELD EFFECT TRANSISTORS;
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EID: 0029226139
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (8)
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References (18)
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