The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAlAs/InGaAs heterostructure field-effect transistors

Microwave and Optical Technology Letters

Volumn 11, Issue 3, 1996, Pages 125-128

  Auer, U ^a   Reuter, R ^a   Ellrodt, P ^a   Heedt, C ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Channel to gate transfer rate of holes; Gate leakage current; Impact ionization; InP based heterostructure field effect transistor; Pseudomorphic AlAs spacer layer

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRODES; ELECTRON TUNNELING; GATES (TRANSISTOR); HETEROJUNCTIONS; IONIZATION; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS;

CHANNEL TO GATE TRANSFER RATE OF HOLE; GATE DRAIN BREAKDOWN VOLTAGE; GATE LEAKAGE CURRENT; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; IMPACT IONIZATION; PARASITIC GATE CURRENT; PSEUDOMORPHIC SPACER LAYER; VALENCE BAND DISCONTINUITY;

FIELD EFFECT TRANSISTORS;

EID: 0030081968     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1098-2760(19960220)11:3<125::aid-mop4>3.0.co;2-n     Document Type: Article

References (11)

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