A New Noise Model of HFET with Special Emphasis on Gate-Leakage

IEEE Electron Device Letters

Volumn 16, Issue 2, 1995, Pages 74-76

  Reuter, R ^a   van Waasen, S ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CIRCUIT THEORY; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SIGNAL NOISE MEASUREMENT; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

FREQUENCY RANGE; GATE CURRENT; GATE LEAKAGE CURRENT; HETEROJUNCTION FIELD EFFECT TRANSISTORS; NOISE MODEL; THREE EQUIVALENT NOISE TEMPERATURE;

FIELD EFFECT TRANSISTORS;

EID: 0029254599     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.386024     Document Type: Article

References (8)

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