RF measurement of impact ionization and its temperature dependence in AlSb/InAs HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1994, Pages 339-342

  Kruppa, W ^a   Boos, J B ^a  

^a SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRIC CURRENTS; ELECTRIC FREQUENCY MEASUREMENT; HYSTERESIS; IONIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION LINE THEORY;

CURRENT INSTABILITY; DRAIN BIAS; FREQUENCY RANGE; HIGH GATE CURRENT; IMPACT IONIZATION; INDUCTIVE OUTPUT IMPEDANCE; LOW FREQUENCY NOISE; RADIO FREQUENCY MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028288838     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)