A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources

1995 25th European Microwave Conference

Volumn 1, Issue , 1995, Pages 205-210

  Reuter, R ^a   Van Waasen, St ^a   Peters, D ^a   Auer, U ^a   Brockerhoff, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS;

BIAS DEPENDENCE; GATE-LEAKAGE CURRENT; INTRINSIC NOISE; NOISE MEASUREMENTS; NOISE PARAMETERS; NOISE PERFORMANCE; SMALL SIGNAL EQUIVALENT CIRCUIT; WIDE FREQUENCY RANGE;

LEAKAGE CURRENTS;

EID: 84897507979     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1995.336947     Document Type: Conference Paper

References (15)

1. R. Reuter, S. van Waasen, F.J. Tegude; A New Noise Model of HFET with Special Emphasis on Gate-Leakage;1995; IEEE Electron Device Letters; Vol. 16, No. 2; pp. 74-76.
2. F. Danneville, G. Dambrine, H. Happy, P. Tadyszak, A. Cappy; Influence of the Gate Leakage current on the Noise Performance of MESFETs and MODFETs; 1995; Solid-State Electronics; Vol. 38, No. 5; pp. 1081-1087.
3. F. Danneville, G. Dambrine, H. Happy, A. Cappy; Influence of the Gate Leakage Current on the Noise Performance of MESFET's and MODFET's; 1993; IEEE MTT-S Digest; pp. 373-376.
4. C. Bergamaschi, W. Patrick, W. Baechtold; Determination of the Noise Source Parameters in AllnAS/GalnAs HEMT Heterostructures Based on Measured Noise Temperature Dependence on the Electric Field; 1994; InP & Related Materials; pp. 21-24.
5. C. Heedt, F. Buchali, W. Prost, W. Brockerhoff, D. Fritsche, H. Nickel, R. Losch, W. Schlapp, F.J. Tegude; Drastic Reduction of Gate-Leakage in InAIAs/InGaAs HEMTs Using a Pseudomorphic InAIAs Hole Barrier Layer; 1994; IEEE Transactions on Electron Devices; Vol. 4.1, No. 10; pp. 1685-1690.
6. c Superconductors at Cryogenic Temperatures Down to 20 K; 1994; IEEE Transactions on Microwave Theory and Techniques; Vol. 40, No. 12; pp. 2315-2331.
7. H. Kondoh; An Accurate FET Modeling From Measured S-Parameters; 1986; IEEE MTT-S Digest; pp. 377-380.
8. E. Schöneburg, F. Heizmann, S. Feddersen; Genetische Algorithmen und Evolutionsstrategien; 1994; Addison Wesley Publishing Company.
9. H. Rothe and W. Dahlke; Theory of noisy four poles; 1956; Proceedings of the IRE; Vol. 44; pp. 811-818.
10. H. Hillbrand and P. H. Russer; An efficient method for computer aided noise analysis of linear amplifier networks; 1976; IEEE Transactions on Circuits and Systems; Vol. CAS23, No. 4; pp. 235-238.
11. R. Q. Twiss; Nyquist's and Thevenin's Theorems Generalized for Nonreciprocal Linear Networks; 1955; Journal of Applied Physics; Vol. 26; pp. 599-602.
12. Marian W. Pospieszalski; Modeling of Noise Parameters of MESFET's and MODFET's and Their Frequency and Temperature Dependence; 1989; IEEE Transactions on Microwave Theory and Techniques; Vol. 37, No. 9; pp. 1340-1350.
13. 0.47 As junction field-effect transistors; 1992; Applied Physics Letters; Vol. 60, No. 13; pp. 1588-1590.
14. W. A. Strifler, B. T. Pugh, R. D. Remba; Shot noise in GaAs metal semiconductor field effect transistors with high gate leakage current; 1994; Solid-State Electronics; Vol. 37, No. 10; pp. 1763-1764.
15. N. Moll, M. R. Hueschen, A. Fischer-Colbrie; Pulse-Doped AIGaAs/InGaAs Pseudomorphic MODFET's; 1988; IEEE Transactions on Electron Devices; Vol. 35; No. 7; pp. 879-886.