Theory of Carrier Multiplication and Noise in Avalanche Devices—Part II: Two-Carrier Processes

IEEE Transactions on Electron Devices

Volumn 26, Issue 5, 1979, Pages 752-764

  Rucker, Lucien M ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, AVALANCHE;

EID: 0018467684     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19490     Document Type: Article

References (12)

1. K. M. van Vliet and L. M. Rucker, “Theory of carrier multiplication and noise in avalanche devices-Part I: One-carrier processes,” this issue, pp. 746–751.
2. A. S. Tager, “Current fluctuations in a semiconductor (dielectric) under the conditions of impact ionization and avalanche breakdown,” Sov. Phys.-Solid State, vol. 6, pp. 1919–1925, 1965.
3. R. J. McIntyre, “Multiplication noise in uniform avalanche diodes,” IEEE Trans. Electron Devices, vol. ED-13, pp. 164–168, 168, 1966.
4. “The distribution of gains in uniformly multiplying avalanche photodiodes: Theory,” IEEE Trans. Electron Devices, vol. ED-19, pp. 703–713, 1972.
5. S. D. Personick, “New results on avalanche multiplication statistics with applications to optical detection,” Bell. Syst. Tech. J., vol. 50, pp. 167–190, 1971.
6. “Statistics of a general class of avalanche detectors with applications to optical communication,” Bell Syst. Tech. J., vol. 50, pp. 3075–3094, 1971.
7. G. E. Stilman and C. M. Wolfe “Avalanche photodiodes,” in Semiconductors and Semimetals, vol. 12. R. K. Willardson and A. C. Beer, Eds. New York: Academic Press, 1977, ch. 5
8. W. Lukaszek, A. van der Ziel, and E. R. Chenette, “Investigation of the transition from tunneling to impact ionization multiplication in silicon p-n junctions,” Solid-State Electron., vol. 19, pp. 57–71, 1976.
9. J. Conradi, “The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental,” IEEE Trans. Electron Devices, vol. ED-19, pp. 713–718, 1972.
10. P. P. Webb, R. J. McIntyre, and J. Conradi, “Properties of avalanche diodes,” RCA Rev., vol. 35, pp. 324–378, 1974.
11. J. J. Goedbloed and E. T. J. M. Smeets, “Very low noise silicon planar avalanche photodiodes,” Electron. Lett., vol. 14, pp. 67–69, 1978.
12. K. M. van Vliet and L. M. Rucker, “Noise associated with reduction, multiplication and branching processes,” Physica, in press.