Characterization and analysis of a new gate leakage mechanism at high drain bias in InAlAs/InGaAs heterostructure field-effect transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 650-653

  Auer, U ^a   Reuter, R ^a   Ellrodt, P ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; HETEROJUNCTIONS; IONIZATION OF SOLIDS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

GATE LEAKAGE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; IMPACT IONIZATION;

FIELD EFFECT TRANSISTORS;

EID: 0029712485     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)